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Infineon BCR503E6327HTSA1

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 5 mA 1 MHz 33 mW Surface Mount SOT-23-3

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Compliance

Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
900 µm
Length
2.9 mm
Width
1.3 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
10 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Current Rating
500 mA
Element Configuration
Single
hFE Min
40
Input Resistance
2.2 kΩ
Max Breakdown Voltage
50 V
Max Collector Current
500 mA
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
330 mW
Transition Frequency
100 MHz
Voltage Rating (DC)
50 V

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