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Infineon BCR185WH6327XTSA1

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 5 V 1 mA 2 MHz 25 mW Surface Mount PG-SOT323-3

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
800 µm
Length
2 mm
Width
1.25 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
6 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
hFE Min
800 µm
Input Resistance
10 kΩ
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Package Quantity
3000
Packaging
Cut Tape (CT)
Polarity
Tape & Reel
Power Dissipation
250 mW
Transition Frequency
200 MHz

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