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Infineon BCR158WH6327XTSA1

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 5 V 1 mA 2 MHz 25 mW Surface Mount PG-SOT323-3

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Compliance

Halogen Free
Halogen Free
Lead Free
Lead Free
RoHS
Compliant

Physical

Case/Package
SOT
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
5 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Single
hFE Min
2.2 kΩ
Input Resistance
2.2 kΩ
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Package Quantity
3000
Packaging
Tape & Reel
Polarity
PNP
Power Dissipation
250 mW
Transition Frequency
200 MHz

合规性文件

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