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Infineon BCR108E6327HTSA1

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 5 V 1 mA 17 MHz 2 mW Surface Mount SOT-23-3

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Compliance

Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Current Rating
100 mA
Element Configuration
Single
hFE Min
70
Input Resistance
2.2 kΩ
Max Breakdown Voltage
50 V
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
200 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Tape & Reel
Polarity
NPN
Power Dissipation
200 mW
Transition Frequency
170 MHz
Voltage Rating (DC)
50 V

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