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Infineon BCR08PNH6433XTMA1

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 5V 1mA 17MHz 25mW Surface Mount PG-SOT363-6

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Compliance

RoHS
Compliant

Dimensions

Height
1 mm

Physical

Case/Package
SOT-363-6
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
50 V
Element Configuration
Dual
hFE Min
70
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Number of Elements
2
Packaging
Tape & Reel (TR)
Polarity
NPN, PNP
Power Dissipation
250 mW
Transition Frequency
170 MHz

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