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Infineon BCP53-16 H6327

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT PACKAGE-4

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Compliance

RoHS
Compliant

Dimensions

Height
1.8 mm

Physical

Case/Package
TO-261-4
Mount
Surface Mount
Number of Pins
4

Technical

Collector Base Voltage (VCBO)
100 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
80 V
Emitter Base Voltage (VEBO)
5 V
Frequency
125 MHz
hFE Min
100
Manufacturer Package Identifier
PG-SOT223-4
Max Collector Current
1 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
PNP
Power Dissipation
2 W
Transition Frequency
125 MHz

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