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Infineon BC859CE6327HTSA1

Bipolar (BJT) Transistor PNP 3 V 1 mA 25MHz 33 mW Surface Mount SOT-23-3

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Compliance

Halogen Free
Not Halogen Free
Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
SOT
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Collector Base Voltage (VCBO)
30 V
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Saturation Voltage
250 V
Collector Emitter Voltage (VCEO)
30 V
Continuous Collector Current
100 mA
Current Rating
-100 mA
Emitter Base Voltage (VEBO)
5 V
Frequency
250 MHz
hFE Min
420
Max Breakdown Voltage
30 V
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Package Quantity
3000
Packaging
Cut Tape (CT)
Polarity
Tape & Reel
Power Dissipation
330 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
-30 V

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