跳转到主要内容

Infineon BC850BE6327

Bipolar Gen Purpose Transistor

产品详情

Find similar products  

Compliance

RoHS
Compliant

Dimensions

Height
900 µm
Length
2.9 mm
Width
1.3 mm

Physical

Case/Package
SOT-23-3
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
50 V
Collector Emitter Breakdown Voltage
45 V
Collector Emitter Saturation Voltage
600 mV
Collector Emitter Voltage (VCEO)
45 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Gain Bandwidth Product
250 MHz
Max Breakdown Voltage
45 V
Max Collector Current
100 mA
Max Frequency
250 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
330 mW
Min Operating Temperature
-65 °C
Polarity
NPN
Transition Frequency
250 MHz

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us