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Infineon BC846BWE6327

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon

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Compliance

Lead Free
Lead Free
Radiation Hardening
330 mW
RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
SOT-323
Mount
Surface Mount
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
65 V
Current Rating
100 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
250 MHz
Gain Bandwidth Product
250 MHz
hFE Min
200
Max Collector Current
100 mA
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
250 mW
Transition Frequency
250 MHz
Voltage Rating (DC)
60 V

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