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Infineon AUIRLS3036-7P

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS

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Compliance

Radiation Hardening
50
REACH SVHC
No SVHC
RoHS
1.9 mΩ

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
IBS

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
7

Supply Chain

Lifecycle Status
NRND

Technical

Continuous Drain Current (ID)
240 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.7 mΩ
Drain to Source Voltage (Vdss)
1.7 mΩ
Element Configuration
Single
Fall Time
170 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
5.084 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1.9 mΩ
Package Quantity
1.9 mΩ
Power Dissipation
380 W
Rds On Max
1.9 mΩ
Rise Time
540 ns
Threshold Voltage
1 V
Turn-Off Delay Time
89 ns
Turn-On Delay Time
Compliant

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