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Infineon AUIRLR3636

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
6.8 MΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Technical

Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
8.3 mΩ
Drain to Source Voltage (Vdss)
60 V
Element Configuration
Single
Fall Time
69 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
3.779 nF
Max Operating Temperature
175 °C
Max Power Dissipation
143 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
143 W
Rds On Max
6.8 mΩ
Resistance
6.8 MΩ
Rise Time
6.8 mΩ
Threshold Voltage
216 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

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