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Infineon AUIRLR3410

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
105 mΩ

Dimensions

Height
2.3876 mm
Length
6.7056 mm
Width
IBS

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
155 µΩ
Drain to Source Voltage (Vdss)
125 mΩ
Element Configuration
Single
Fall Time
26 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
2.52 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
105 mΩ
Package Quantity
105 mΩ
Power Dissipation
3000
Rds On Max
105 mΩ
Rise Time
53 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
7.2 ns

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