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Infineon AUIRLR2908

Automotive Q101 80V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Radiation Hardening
3000
RoHS
28 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
39 A
Drain to Source Breakdown Voltage
80 V
Drain to Source Resistance
22.5 mΩ
Drain to Source Voltage (Vdss)
22.5 mΩ
Element Configuration
Single
Fall Time
55 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
1.89 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
28 mΩ
Package Quantity
28 mΩ
Power Dissipation
120 W
Rds On Max
28 mΩ
Rise Time
95 ns
Turn-Off Delay Time
36 ns
Turn-On Delay Time
Compliant

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