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Infineon AUIRLR024N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
3000
REACH SVHC
No SVHC
RoHS
65 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
65 mΩ
Element Configuration
Single
Fall Time
29 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
480 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
65 mΩ
Package Quantity
65 mΩ
Power Dissipation
45 W
Rds On Max
65 mΩ
Rise Time
74 ns
Threshold Voltage
1 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
Compliant

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