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Infineon AUIRLL024ZTR

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package, SOT223-4, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
60 mΩ

Physical

Case/Package
SOT-223
Mount
-55 °C
Number of Pins
4

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
5:00 AM
Drain to Source Breakdown Voltage
5 A
Drain to Source Resistance
48 mΩ
Drain to Source Voltage (Vdss)
48 mΩ
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
380 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
60 mΩ
Package Quantity
60 mΩ
Packaging
Tape & Reel
Power Dissipation
2500
Rds On Max
60 mΩ
Rise Time
33 ns
Turn-Off Delay Time
20 ns
Turn-On Delay Time
8.6 ns

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