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Infineon AUIRLL024NTR

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 Package, SOT223-4, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.8 mm
Length
6.7 mm
Width
3.7 mm

Physical

Case/Package
SOT-223
Mount
Surface Mount
Number of Pins
4

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
3.1 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
55 V
Fall Time
25 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
510 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
65 mΩ
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
1 W
Rds On Max
65 mΩ
Rise Time
21 ns
Threshold Voltage
1 V
Turn-Off Delay Time
18 ns
Turn-On Delay Time
7.4 ns

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