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Infineon AUIRFZ44ZS

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
13.9 mΩ

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
11.3 mm

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
51 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
13.9 mΩ
Drain to Source Voltage (Vdss)
55 V
Element Configuration
Single
Fall Time
41 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.42 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
80 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
13.9 mΩ
Package Quantity
13.9 mΩ
Power Dissipation
1000
Rds On Max
13.9 mΩ
Rise Time
68 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

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