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Infineon AUIRFS8407TRL

AUIRFS8407 N-channel MOSFET Transistor; 195 A; 250 A; 40 V; 3-Pin D2PAK

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Compliance

Lead Free
Lead Free
Radiation Hardening
800
RoHS
1.8 mΩ

Dimensions

Height
5.084 mm

Physical

Case/Package
D2PAK
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
250 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.4 mΩ
Drain to Source Voltage (Vdss)
1.4 mΩ
Fall Time
53 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.33 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1.8 mΩ
Package Quantity
1.8 mΩ
Power Dissipation
230 W
Rds On Max
1.8 mΩ
Rise Time
70 ns
Turn-Off Delay Time
78 ns
Turn-On Delay Time
19 ns

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