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Infineon AUIRFS8403

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
3.3 mΩ

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
Compliant

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
123 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
2.6 mΩ
Drain to Source Voltage (Vdss)
2.6 mΩ
Element Configuration
Single
Fall Time
43 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.084 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
1
Number of Elements
1
On-State Resistance
3.3 mΩ
Package Quantity
3.3 mΩ
Power Dissipation
99 W
Rds On Max
3.3 mΩ
Rise Time
77 ns
Turn-Off Delay Time
26 ns
Turn-On Delay Time
10 ns

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