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Infineon AUIRFS4310

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.084 mm
Length
10.67 mm
Width
9.65 mm

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
130 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
5.6 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
78 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.67 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
300 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
On-State Resistance
7 mΩ
Package Quantity
1000
Power Dissipation
300 W
Rds On Max
7 mΩ
Rise Time
110 ns
Threshold Voltage
2 V
Turn-Off Delay Time
68 ns
Turn-On Delay Time
26 ns

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