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Infineon AUIRFS3004TRL

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

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Compliance

Radiation Hardening
No
RoHS
1.75 mΩ

Physical

Case/Package
TO-252-3
Mount
-55 °C

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
340 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.4 mΩ
Drain to Source Voltage (Vdss)
1.4 mΩ
Fall Time
130 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
9.2 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
1.75 mΩ
Package Quantity
1.75 mΩ
Packaging
Tape & Reel (TR)
Power Dissipation
800
Rds On Max
1.75 mΩ
Rise Time
220 ns
Turn-Off Delay Time
90 ns
Turn-On Delay Time
23 ns

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