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Infineon AUIRFR8405TRL

AUIRFR8405 N-channel MOSFET Transistor; 100 A; 211 A; 40 V; 3-Pin DPAK

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Compliance

Lead Free
Lead Free
Radiation Hardening
3000
RoHS
1.98 mΩ

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
150 A
Drain to Source Resistance
1.65 mΩ
Drain to Source Voltage (Vdss)
1.65 mΩ
Fall Time
51 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.171 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1.98 mΩ
Package Quantity
1.98 mΩ
Power Dissipation
163 W
Rds On Max
1.98 mΩ
Rise Time
80 ns
Turn-Off Delay Time
51 ns
Turn-On Delay Time
Compliant

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