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Infineon AUIRFR6215

Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
295 mΩ

Dimensions

Height
2.3876 mm
Length
6.7056 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-13 A
Drain to Source Breakdown Voltage
-150 V
Drain to Source Resistance
295 mΩ
Drain to Source Voltage (Vdss)
-150 V
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
860 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
110 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
580 mΩ
Package Quantity
580 mΩ
Power Dissipation
110 W
Rds On Max
295 mΩ
Rise Time
36 ns
Turn-Off Delay Time
53 ns
Turn-On Delay Time
14 ns

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