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Infineon AUIRFR5410TRL

Automotive Q101 -100V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
2.52 mm

Physical

Case/Package
TO-252-3
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-13 A
Drain to Source Breakdown Voltage
-100 V
Drain to Source Resistance
205 mΩ
Drain to Source Voltage (Vdss)
-100 V
Element Configuration
Single
Fall Time
46 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
760 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
66 W
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
205 mΩ
Package Quantity
3000
Packaging
Tape & Reel
Power Dissipation
66 W
Rds On Max
205 mΩ
Rise Time
58 ns
Turn-Off Delay Time
45 ns
Turn-On Delay Time
15 ns

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