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Infineon AUIRFR540ZTRL

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Radiation Hardening
3000
REACH SVHC
No SVHC
RoHS
28.5 mΩ

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
35 A
Drain to Source Resistance
22.5 mΩ
Drain to Source Voltage (Vdss)
22.5 mΩ
Fall Time
34 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.69 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
On-State Resistance
28.5 mΩ
Package Quantity
28.5 mΩ
Power Dissipation
91 W
Rds On Max
28.5 mΩ
Rise Time
42 ns
Threshold Voltage
4 V
Turn-Off Delay Time
43 ns
Turn-On Delay Time
Compliant

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