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Infineon AUIRFR4292TRL

Automotive Q101 250V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Radiation Hardening
3000
RoHS
345 mΩ

Dimensions

Height
2.52 mm

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
9.3 A
Drain to Source Breakdown Voltage
250 V
Drain to Source Resistance
275 mΩ
Drain to Source Voltage (Vdss)
275 mΩ
Fall Time
8.4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
705 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
345 mΩ
Package Quantity
345 mΩ
Power Dissipation
100 W
Rds On Max
345 mΩ
Rise Time
15 ns
Turn-Off Delay Time
16 ns
Turn-On Delay Time
Compliant

合规性文件

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