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Infineon AUIRFR3710Z

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
18 MΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
42 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
15 mΩ
Drain to Source Voltage (Vdss)
15 mΩ
Element Configuration
Single
Fall Time
42 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.52 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
Power Dissipation
140 W
Rds On Max
18 mΩ
Resistance
18 MΩ
Rise Time
18 mΩ
Threshold Voltage
43 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14 ns

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