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Infineon AUIRFR3607

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
9 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Technical

Continuous Drain Current (ID)
56 A
Drain to Source Breakdown Voltage
75 V
Drain to Source Resistance
9 mΩ
Drain to Source Voltage (Vdss)
75 V
Element Configuration
Single
Fall Time
96 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.07 nF
Max Operating Temperature
175 °C
Max Power Dissipation
140 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
140 W
Rds On Max
9 mΩ
Rise Time
110 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

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