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Infineon AUIRFR2607Z

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.52 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
NRND

Technical

Continuous Drain Current (ID)
45 A
Drain to Source Breakdown Voltage
75 V
Drain to Source Resistance
17.6 mΩ
Drain to Source Voltage (Vdss)
75 V
Element Configuration
Single
Fall Time
28 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.44 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
110 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
22 mΩ
Package Quantity
3000
Packaging
Rail/Tube
Power Dissipation
110 W
Rds On Max
22 mΩ
Rise Time
59 ns
Threshold Voltage
2 V
Turn-Off Delay Time
39 ns
Turn-On Delay Time
14 ns

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