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Infineon AUIRFR024N

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
75 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
75 mΩ
Drain to Source Voltage (Vdss)
75 mΩ
Element Configuration
Single
Fall Time
27 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.52 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
45 W
Rds On Max
75 mΩ
Rise Time
34 ns
Threshold Voltage
2 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
Compliant

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