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Infineon AUIRFP4110

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC Package

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Compliance

RoHS
Compliant

Dimensions

Height
24.99 mm

Physical

Case/Package
TO-247-3
Mount
Through Hole

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.7 mΩ
Drain to Source Voltage (Vdss)
100 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
9.62 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
370 W
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
4.5 mΩ
Package Quantity
400
Power Dissipation
370 W
Rds On Max
4.5 mΩ
Turn-Off Delay Time
78 ns
Turn-On Delay Time
25 ns

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