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Infineon AUIRFN8459TR

40V Dual N Channel HEXFET Power MOSFET in a PQFN 5 x 6 L package, DUAL PQFN 5X6 8L, RoHS

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Compliance

RoHS
Compliant

Dimensions

Height
1.2 mm

Physical

Mount
Surface Mount
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
50 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
4.8 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Dual
Fall Time
42 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.25 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
50 W
Min Operating Temperature
-55 °C
Number of Channels
2
On-State Resistance
5.9 mΩ
Package Quantity
4000
Packaging
Tape & Reel
Power Dissipation
50 W
Rds On Max
5.9 mΩ
Resistance
4.8 mΩ
Rise Time
55 ns
Turn-Off Delay Time
25 ns
Turn-On Delay Time
10 ns

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