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Infineon AUIRFN7110TR

100V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 E package, PG-TDSON-8, RoHS

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Compliance

RoHS
Compliant

Dimensions

Height
1.17 mm

Physical

Mount
-55 °C
Number of Pins
8

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
58 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
11.5 mΩ
Drain to Source Voltage (Vdss)
11.5 mΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.05 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
On-State Resistance
14.5 mΩ
Package Quantity
14.5 mΩ
Packaging
Tape & Reel
Power Dissipation
4000
Rds On Max
14.5 mΩ
Turn-Off Delay Time
14.5 mΩ
Turn-On Delay Time
11 ns

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