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Infineon AUIRFB8409

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
1.3 mΩ

Dimensions

Height
9.02 mm
Length
10.67 mm
Width
IBS

Physical

Case/Package
TO-220AB
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
195 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1 mΩ
Drain to Source Voltage (Vdss)
1 mΩ
Element Configuration
Single
Fall Time
100 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
20.56 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Nominal Vgs
2.2 V
Number of Channels
1
Number of Elements
1
On-State Resistance
1.2 mΩ
Package Quantity
1.2 mΩ
Power Dissipation
375 W
Rds On Max
1.3 mΩ
Rise Time
105 ns
Threshold Voltage
3.9 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
32 ns

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