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Infineon AUIRF9Z34N

INFINEON AUIRF9Z34N MOSFET Transistor, P Channel, -19 A, -55 V, 0.1 ohm, -10 V, -2 V

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Compliance

Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
16.51 mm
Length
10.66 mm
Width
IBS

Physical

Case/Package
TO-220AB
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
-19 A
Drain to Source Breakdown Voltage
-55 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
100 mΩ
Element Configuration
Single
Fall Time
41 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
620 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
100 mΩ
Package Quantity
100 mΩ
Power Dissipation
68 W
Rise Time
55 ns
Threshold Voltage
-2 V
Turn-Off Delay Time
30 ns
Turn-On Delay Time
13 ns

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