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Infineon AUIRF7669L2TR

Single N-Channel 100V 4.4 mOhm 81nC Automotive HEXFET Power Mosfet - DirectFET

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
4.4 mΩ

Dimensions

Height
740 µm

Physical

Mount
-55 °C
Number of Pins
15

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
114 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.5 mΩ
Drain to Source Voltage (Vdss)
3.5 mΩ
Fall Time
14 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
740 µm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
4.4 mΩ
Package Quantity
4.4 mΩ
Packaging
Tape & Reel
Power Dissipation
4000
Rds On Max
4.4 mΩ
Rise Time
30 ns
Turn-Off Delay Time
27 ns
Turn-On Delay Time
Compliant

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