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Infineon AUIRF7379QTR

Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
5 mm
Width
4 mm

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.3 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
75 mΩ
Drain to Source Voltage (Vdss)
75 mΩ
Element Configuration
Dual
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.75 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1 V
Number of Channels
2
Number of Elements
2
Package Quantity
4000
Packaging
Tape & Reel
Power Dissipation
2.5 W
Rds On Max
45 mΩ
Threshold Voltage
45 mΩ

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