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Infineon AUIRF6215

Automotive Q101 -150V Single P-Channel HEXFET Power MOSFET in a TO-220AB Package

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
290 mΩ

Dimensions

Height
16.51 mm
Length
10.66 mm
Width
IBS

Physical

Case/Package
TO-220AB
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-13 A
Drain to Source Breakdown Voltage
-150 V
Drain to Source Resistance
290 mΩ
Drain to Source Voltage (Vdss)
290 mΩ
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
19.8 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
290 mΩ
Package Quantity
290 mΩ
Packaging
Rail/Tube
Power Dissipation
1000
Rds On Max
290 mΩ
Rise Time
36 ns
Threshold Voltage
-2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14 ns

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