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Infineon AUIRF540Z

Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
20.56 mm
Length
10.66 mm
Width
4.82 mm

Physical

Case/Package
TO-220AB
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
36 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
21 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
39 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.77 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
92 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
On-State Resistance
26.5 mΩ
Package Quantity
1000
Packaging
Rail/Tube
Power Dissipation
92 W
Rds On Max
26.5 mΩ
Rise Time
51 ns
Threshold Voltage
2 V
Turn-Off Delay Time
43 ns
Turn-On Delay Time
15 ns

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