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Infineon AUIRF3805S-7P

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS

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Compliance

Radiation Hardening
50
REACH SVHC
No SVHC
RoHS
2.6 mΩ

Dimensions

Height
4.55 mm
Length
10.35 mm
Width
IBS

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
7

Supply Chain

Lifecycle Status
NRND

Technical

Continuous Drain Current (ID)
240 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
2 mΩ
Drain to Source Voltage (Vdss)
2 mΩ
Element Configuration
Single
Fall Time
52 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.82 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
2.6 mΩ
Package Quantity
2.6 mΩ
Power Dissipation
300 W
Rds On Max
2.6 mΩ
Rise Time
130 ns
Threshold Voltage
2 V
Turn-Off Delay Time
80 ns
Turn-On Delay Time
Compliant

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