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Infineon AUIRF3805

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
3.3 MΩ

Dimensions

Height
16.51 mm
Length
10.66 mm
Width
4.82 mm

Physical

Case/Package
TO-220AB
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
210 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
2.6 mΩ
Drain to Source Voltage (Vdss)
55 V
Element Configuration
Single
Fall Time
87 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.96 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
300 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
3.3 mΩ
Package Quantity
3.3 mΩ
Power Dissipation
300 W
Rds On Max
3.3 mΩ
Resistance
3.3 MΩ
Rise Time
3.3 mΩ
Threshold Voltage
2 V
Turn-Off Delay Time
93 ns
Turn-On Delay Time
150 ns

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