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Infineon AUIRF3305

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

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Compliance

Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
8 mΩ

Dimensions

Height
16.51 mm
Length
10.66 mm
Width
IBS

Physical

Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
140 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
8 mΩ
Element Configuration
Single
Fall Time
34 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.65 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
8 mΩ
Package Quantity
8 mΩ
Power Dissipation
330 W
Rds On Max
8 mΩ
Rise Time
88 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
16 ns

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