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Infineon AUIRF2903ZS

Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
9.65 mm

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
235 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
37 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.32 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
231 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Elements
1
On-State Resistance
2.4 mΩ
Package Quantity
1000
Power Dissipation
231 W
Rds On Max
2.4 mΩ
Rise Time
100 ns
Turn-Off Delay Time
48 ns
Turn-On Delay Time
24 ns

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