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Infineon AUIRF2807

Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
20.57 mm
Length
10.66 mm
Width
4.82 mm

Physical

Case/Package
TO-220AB
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
75 A
Drain to Source Breakdown Voltage
75 V
Drain to Source Resistance
13 mΩ
Drain to Source Voltage (Vdss)
75 V
Element Configuration
Single
Fall Time
48 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.82 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
230 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
On-State Resistance
13 mΩ
Package Quantity
1000
Power Dissipation
230 W
Rds On Max
13 mΩ
Rise Time
64 ns
Threshold Voltage
2 V
Turn-Off Delay Time
49 ns
Turn-On Delay Time
13 ns

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