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Infineon AUIRF2804STRL7P

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
7

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
320 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.6 mΩ
Drain to Source Voltage (Vdss)
40 V
Fall Time
100 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.93 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
330 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
1.6 mΩ
Package Quantity
800
Packaging
Tape & Reel (TR)
Power Dissipation
330 W
Rds On Max
1.6 mΩ
Rise Time
150 ns
Turn-Off Delay Time
110 ns
Turn-On Delay Time
17 ns

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