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Infineon AUIRF2804S-7P

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS

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Compliance

Radiation Hardening
50
REACH SVHC
No SVHC
RoHS
1.6 mΩ

Dimensions

Height
4.572 mm
Length
10.668 mm
Width
IBS

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
1

Supply Chain

Lifecycle Status
NRND

Technical

Continuous Drain Current (ID)
320 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1.6 mΩ
Drain to Source Voltage (Vdss)
1.6 mΩ
Element Configuration
40 V
Fall Time
100 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.93 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
330 W
Number of Elements
-55 °C
On-State Resistance
1.6 mΩ
Package Quantity
1.6 mΩ
Power Dissipation
330 W
Rds On Max
50
Rise Time
150 ns
Threshold Voltage
1.6 mΩ
Turn-Off Delay Time
110 ns
Turn-On Delay Time
Compliant

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