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Infineon AUIRF2804L

Automotive 40V Single N-Channel HEXFET Power MOSFET in a I2PAK (TO-262) package, TO262-3, RoHS

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
2 mΩ

Dimensions

Height
9.65 mm
Length
10.668 mm
Width
4.6228 mm

Physical

Case/Package
TO-262
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
270 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
2.3 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Fall Time
130 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6.45 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
300 W
Min Operating Temperature
-55 °C
Number of Elements
1
On-State Resistance
2 mΩ
Package Quantity
2 mΩ
Power Dissipation
1000
Rds On Max
2 mΩ
Rise Time
120 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
IBS

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