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Infineon AUIRF1405ZS

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS

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Compliance

Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
4.9 mΩ

Dimensions

Height
4.826 mm
Length
10.668 mm
Width
IBS

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
2

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
150 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
3.7 mΩ
Drain to Source Voltage (Vdss)
3.7 mΩ
Element Configuration
Single
Fall Time
82 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.084 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
4.9 mΩ
Package Quantity
4.9 mΩ
Power Dissipation
230 W
Rds On Max
4.9 mΩ
Rise Time
110 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
18 ns

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