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Infineon AUIRF1404ZL

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS

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Compliance

Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
3.7 mΩ

Dimensions

Height
9.652 mm
Length
10.668 mm
Width
IBS

Physical

Case/Package
TO-262
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
180 A
Drain to Source Breakdown Voltage
160 A
Drain to Source Resistance
3.7 mΩ
Drain to Source Voltage (Vdss)
2.7 mΩ
Element Configuration
Single
Fall Time
58 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
15.01 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
3.7 mΩ
Package Quantity
3.7 mΩ
Power Dissipation
200 W
Rds On Max
3.7 mΩ
Rise Time
110 ns
Threshold Voltage
2 V
Turn-Off Delay Time
36 ns
Turn-On Delay Time
Compliant

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