跳转到主要内容

Infineon AUIRF1404Z

Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

产品详情

Find similar products  

Compliance

Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
3.7 mΩ

Dimensions

Height
9.017 mm
Length
10.668 mm
Width
IBS

Physical

Case/Package
TO-220AB
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
160 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
2.7 mΩ
Drain to Source Voltage (Vdss)
2.7 mΩ
Element Configuration
Single
Fall Time
58 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
19.8 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
3.7 mΩ
Package Quantity
3.7 mΩ
Power Dissipation
200 W
Rds On Max
3.7 mΩ
Rise Time
110 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
18 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us